PART |
Description |
Maker |
PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 80 V, 4.1 mΩ standard level FET
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NXP Semiconductors N.V.
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2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
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PHB101NQ04T PHP101NQ04T |
N-channel Trenchmos (tm) standard level FET N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS standard level FET From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET) 42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
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MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
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MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
SFR9024 SFU9024 SFS9520 SFR9024TF SFR9024TM SFU902 |
Avalanche Rugged Technology Advanced Power MOSFET 60V P-Channel A-FET / Substitute of IRFR9024 60V P-Channel A-FET / Substitute of IRFU9024
|
FAIRCHILD[Fairchild Semiconductor]
|
2SJ555 |
0.036 ohm, POWER, FET Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|